💼 Full-Time Position

Principal Medium Voltage Power MOSFET Design Engineer

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Renesas Electronics
📍 Takasaki, Gunma Prefecture, Japan
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Location
Takasaki, Japan
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Posted
May 31, 2026
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Type
Full-Time
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Full-Time Opportunity: This is a permanent, full-time position with a competitive package and real career growth potential.

Job Description


Job Description

Job Summary:
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.

Key Responsibilities:

  • Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
  • Develop TCAD simulation decks and propose advanced device design concepts
  • Analyze wafer-level electrical test results and package-level performance data for each development iteration
  • Lead yield improvement activities and support technology transfer to mass production
  • Contribute to the d...